OPEN ACCESS
Latest technology in Very Large Scale Integrated (VLSI) system memories is fully depends onpower, size and cost. Generally static based memory is using to make memory devices. But the dis-advantages of static memory are logically less compatible, power consumption, high silicon foot print. Dynamic Efficient-Cell Enhanced Random Access Memory (DEC-ERAM) is proposed to overcome these drawbacks as compared static based memory. DEC-ERAM can store voltage with different level in a cell. In this paper the experiment was done ina three level storage within a cell. The area is directly proportional to memory to increase its capacity. DEC-ERAM was modeled in a sixty five (65 nm) technology using low overhead CMOS standard, fifty percent virtual display driver for device writes and equidistant composed of inclined sense DC-AC converter for components readout. DEC-ERAM provides 3X reduction and this approach reduce the area to almost 50% when compared to static DRAM.
transistor, memory cell, equidistant sensing
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