Analysis of Dielectric Properties of PVA/PEG/In2O3 Nanostructures for Electronics Devices
Noor Hayder | Ahmed Hashim* | Majeed Ali Habeeb | Bahaa H. Rabee | Abeer Ghalib Hadi | Musaab Khudhur Mohammed
© 2022 IIETA. This article is published by IIETA and is licensed under the CC BY 4.0 license (http://creativecommons.org/licenses/by/4.0/).
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The dielectric characteristics of PVA/PEG/In2O3 nanostructures were tested to use in various electric nanodevices. The films of nanostructures of PVA/PEG/In2O3 were synthesized by casting solution technique. The dielectric characters of PVA/PEG/In2O3 nanostructures were determined. Results expressed that the dielectric parameters of PVA/PEG were rise with rise in the In2O3 NPs ratio. The performance of ε', ε" and σAC with frequency illustrated that the ε' and ε" reduced whereas the σAC rises with rise in frequency. The final results demonstrated the PVA/PEG/In2O3 nanostructures may be suitable in various electrical nanodevices.
In2O3, nanostructures, dielectric, PVA/PEG, nanodevices, conductivity
Nanocomposites of (inorganic/organic) system include gained a technical robust in the linear and nonlinear optics field, solar cells due to their exceptional characteristics and novel approaches [1]. Composites included excellent potential for different industrial applications as a result of their good characteristics like elevated hardness, elevated melting point (Tm), low density, low thermal expansion coefficient, elevated thermal conductivity, excellent chemical stability and enhanced mechanical characteristics like elevated specific strength, improved wear resistance & specific modulus. Composites are employed in manufacturing optoelectronic device, solar cells, light emitting diodes, laser diodes and industrial fields [2]. Commonly the investigating is viewing extensive attention towards metallic oxide nanostructure as a result of their potential employ in broad range of fields such as optoelectronic, sensors and information storage [3]. Polymer blending is one of the mainly significant contemporary approaches for the enlargement of novel polymeric matters and it is a functional method for design matters with a large variety of characters. The important polymer blends advantages are many exhibit characteristics that are greater compared to the characteristics of every individual element polymer [4]. Polyvinyl alcohol (PVA) is semi-crystalline matter that possesses good biodegradability, functional mechanical characteristics, biocompatibility, good optical characteristics, and non-toxicity, consequently its large series of fields. Other admirable characteristics of PVA include high optical transmission, non-corrosiveness stable of thermal and soluble of water [5]. PVA is soluble polymer material in water that included exacting attention as a result of its hydrophilicity and biocompatibility characteristics. PVA is harmless and has good thermal stability, making it a confident candidate to be employed in biomedicine and biotechnology approaches. PVA presents a good host substance as a result of its excellent morphology of film, joint with elevated flexibility [6]. Polyethylene glycol, PEG is a thermoplastic class of polymer with good crystallinity and excellent solubility of water, nontoxic and it includes high toughness and excellent biocompatibility [7]. Indium oxide, In2O3 has many advantages employed for transparent electronic fields, due to the its good optical transparency, broad band gap and low electrical resistivity [8]. Indium oxide, In2O3 has been extensively employed in displays of flat board, optoelectronic changer, displays of liquid crystal, solar cells and photovoltaic devices [9]. The studies on the electrical and optical characteristics of polymers substances included attracted much consideration in view of their appliance in optical and electronic devices [10]. Polymer composites based on inorganic oxides have aroused increasing interest in such fields of science as materials science or related fields (physics and chemistry of materials). Polymer/inorganic oxide composites often exhibit different material properties compared to pure polymers. They often differ from pure polymers in their optical, thermal and electrical properties [11]. The present work aims to fabricate of PVA/PEG/In2O3 nanostructure from PVA/PEG as matrix and In2O3 nanoparticles as additive and studying the A.C electrical properties with different frequencies and In2O3 nanoparticles contents to use in various electronics nanodevices.
Films of polyvinyl alcohol (PVA)/ polyethylene glycol (PEG) doped with indium oxide (In2O3) were synthesized by casting process. In2O3 was used as powder from US Research Nanomaterials with high purity 99.9%. The blend film (70%PVA/30%PEG) was prepared by dissolving of 1 gm in distilled water (30 ml) where the PVA was dissolved at 80℃ and let to each at room temperature, then the PEG was added to PVA solution. The nanostructures films were fabricated by adding of the In2O3 NPs to solution (PVA/PEG) with contents 1%, 2%, and 3%. The dielectric characteristics of PVA/PEG/ In2O3 films tested at (f=100 Hz to 5 ×106 Hz) by LCR meter. The dielectric constant, έ is given by [12, 13]:
$\varepsilon^{\prime}=\mathrm{C}_{\mathrm{p}} \mathrm{d} / \varepsilon_{\mathrm{o}} \mathrm{A}$ (1)
wherever, Cp is capacitance of matter, thickness (d in cm), A= (in cm2), εₒ is the vacuum permittivity.
Dielectric loss; ε˝ is calculated by [14, 15]:
$\varepsilon^{\prime \prime}={\varepsilon}^{\prime} \times \mathrm{D}$ (2)
wherever, D: dispersion factor.
The A.C electrical conductivity is determined by [16, 17]:
$\sigma_{\mathrm{A} . \mathrm{C}}=2 \pi \mathrm{f} \varepsilon^{\prime} \mathrm{D} \varepsilon_0$ (3)
Figures 1 and 2 demonstrate the behaviors of ε' and ε" with frequency of blend/In2O3 nanomaterials. The dielectric constant and loss are reduced when the frequency rises. The ε' and ε" values of blend/In2O3 nanostructures at a low frequency may be related to the effect of interfacial polarization or Maxwell– Wagner–Sillars. The influence of In2O3 NPs content on the ε' and ε" of PVA/PEG/In2O3 nanostructures are illustrated in Figures 3 and 4. The rise in values of ε' and ε" related to increase the charge carriers [18-25]. On the other hand, at high frequencies, dielectric constant and dielectric loss were found to be relatively constant with frequency. This is lead to the field periodical reversal takes place so quickly that the charge carriers will hardly be able to orient themselves in the direction of field resultant in the reduce in dielectric constant and dielectric loss. At low In2O3 NPs concentration, the dielectric constant and dielectric loss values are less. The rise of In2O3NPs concentration led to rise in the average number of concentrations among the In2O3 NPs. At higher concentrations of In2O3 NPs, the dielectric constant and dielectric loss are as a result of a continuous network formation of nanostructures during the nanocomposite [26].
Figure 1. Behavior of ε' with frequency of blend/In2O3 nanomaterials
Figure 2. Behavior of ε" with frequency of blend/In2O3 nanostructures
Figure 3. Influence of In2O3 NPs content on the ε' of PVA/PEG/In2O3 nanostructures at 100Hz
Figure 4. Influence of In2O3 NPs content on the ε" of PVA/PEG/In2O3 nanostructures at 100Hz
Figures 5 and 6 illustrate the performance of A conductivity of PVA/PEG/In2O3 nanostructures with frequency(f) and contents of In2O3 NPs. The σA.C of nanostructures rises with rise in In2O3 NPs ratio and frequency. The rise in conductivity with frequency due to increase of charge carriers mobility. The increase in values of conductivity when the In2O3 NPs content rises relate to improve the electrons number [27-33].
Figure 5. Performance of conductivity of blend/In2O3 nanostructures with frequency(f)
Figure 6. Performance of conductivity of blend/In2O3 nanostructures with of In2O3 NPs contents
The present work includes of fabricating the PVA/PEG/In2O3 nanostructures and investigating their dielectric characteristics. The dielectric properties (ε', ε" and σA.C) of PVA/PEG/In2O3 nanostructures were calculated to utilize in electric nanodevices. Results of dielectric characteristics of PVA/PEG/In2O3 nanostructures expressed the ε', ε" and σA.C of PVA/PEG were rise when the In2O3 NPs content rises. The ε' and ε" are reduced while the σA.C rises when the frequency rises. The results of dielectric characteristics showed the PVA/PEG/In2O3 nanostructures may be utilized in various electric nanodevices.
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