Thermally Deposited Sb2S3: Bi Thin Films for Solar Cell Absorber
In recent years there has been growing interest in the materials suitable for real time storage application. Sb2S3 is a prospective material in this regard due to good photoconductivity. In this contest, thin films of Sb2S3 and Bi3+ doped Sb2S3 were deposited onto the transparent glass substrate by thermal evaporation method. The structural, optical and electrical properties were investigated by XRD, UV-Visible, Photoluminescence, and Impedance spectroscopic techniques. The XRD patterns confirm the orthorhombic crystal structured Sb2S3 and the inclusion of Bi3+ ions in the crystal system. UV-Visible analysis exhibited wide optical absorption in the visible region for both Sb2S3 and Bi3+ doped films and their band gap energy was found to be 1.60 eV and 1.55 eV respectively. The photoluminescence spectra showed a strong emission at 361nm. The value of capacitance, dielectric constant and real part of impedance decreases with increasing frequency for both the samples.
antimony sulfide, bismuth, thin film, dielectric
The authors are thankful to the UGC-SAP, New Delhi for providing the financial support to the Department of Physics, Manonmaniam Sundaranar University, Tirunelveli, Tamil Nadu, India.
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