Growth of Copper Telluride Thin Films using Electrodeposition

Growth of Copper Telluride Thin Films using Electrodeposition

P. Jeyakumar S. Thanikaikarasan* B. Natarajan T. Mahalingam Luis Ixtlilco

Post Graduate and Research Department of Physics, Raja Dorai Singam Government Arts College,Sivagangai - 630 561, Tamil Nadu, India

Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli – 627 152,Tamil Nadu, India

Department of Physics, Alagappa University, Karaikudi – 630 004, Tamil Nadu, India

Universidad Politecnica del Estado de Guerrero, Taxco, Guerrero, Mexico

Corresponding Author Email:
6 October 2017
20 January 2017
16 April 2018
| Citation

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electro-deposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.


Copper Telluride, Cyclic voltammetry, SnO2, Optical absorption analysis

1. Introduction
2. Experimental Detams
3. Results and Discussion
4. Conclusions
5. Acknowledgemtent

The corresponding author Dr. S.Thanikaikarasan (Principal Investigator) gr atefully acknowledge the financial suppor t r eceived from the Board of Research in Nuclear Sciences -Department of Atomic Energy (BRNS-DAE), BARC, Mumbai, India with File No.2012/34/13/BRNS/No.166 for car r ying out this research work. The authors acknowledge CONACYT, Mexico for the financial support through the project 236978.


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