Conducted EMI prediction using different levels of MOSFET models in a multi-physics optimization context

Conducted EMI prediction using different levels of MOSFET models in a multi-physics optimization context

Mohamed Touré
Françoise Paladian
Mohamed Bensetti
Florent Robert
Laurent Dufour

Institut Pascal, CNRS UMR 6602, Université Clermont Auvergne Campus universitaire des cézeaux, 4 av. Blaise Pascal 63178 Aubière Cedex, France

GeePs|, Laboratoire Génie électrique et électronique de Paris, CNRS UMR 8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités UPMC Univ Paris 06, 3-11 rue Joliot-Curie, Plateau de Moulon 91192 Gif-sur-Yvette, France

EFi Automotive Service recherche avancée, 77 allée des Grandes combes, 01708 Beynost, France

Corresponding Author Email:
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This paper proposes a modeling methodology for the prediction of conducted EMI in the context of multi-physics optimization. The study of the well-known DC-DC buck converter is chosen as illustration to validate this procedure. A bottom-up approach is used to model the entire structure. The modeling of switching cell, passive elements and also Printed Circuit Board (PCB) is presented. Models validation by comparison with experimental results helps to estimate the influence of each model on the accuracy of results.


power converter, EMC, conducted EMI, modeling, PCB.

Extended abstract (without number)
1. Introduction
2. Application: buck converter
3. Model of converter and measuring equipment
4. Comparison between simulation results and measurements
5. Prospects and conclusions

This work is done in the framework of partnership between the company EFi AUTOMOTIVE, the Labex Imobs3 and the laboratory GeePs.


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