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The purpose of this paper is to present the Deep Trench SuperJunction Diode (DT- SJDiode) optimization and realization with a 600V breakdown voltage. We present technological and geometrical parameters influences on the breakdown voltage with simulations performed with Sentaurus TCAD. Previous works allowed to validate some critical technological process steps and to create a technological process for 1200 V breakdown voltage applications. The main point here is to optimize those process steps (trench verticality, termination fulfilling...), which have an important influence on the electrical properties, in order to fabricate a 600 V breakdown voltage DT-SJDiode.
superjunction diode, deep trench termination, BenzoCycloButene
For this work, the authors acknowledge the support of the French RENATECH Network and the French Agence Nationale de la Recherche (ANR) under reference ANR-2011-B509-033 (“SUPERSWITCH” project)
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