Electrochemical Growth and Characterization of Lead Sulphide Thin Films

Electrochemical Growth and Characterization of Lead Sulphide Thin Films

S. ThanikaikarasanT. Mahalingam S. Veeramuthumari Luis Ixtlilco 

Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology, Tirunelveli – 627 152, Tamil Nadu, India

Department of Physics, School of Science and Humanities, Karunya University, Coimbatore – 641 114, Tamil Nadu, India

Universidad Politecnica del Estado de Guerrero, Puente Campusano, Taxco, Guerrero, 40290, Mexico

Corresponding Author Email: 
S_thanikai@rediffmail.com
Page: 
133-137
|
DOI: 
https://doi.org/10.14447/jnmes.v16i2.33
Received: 
30 August 2012
|
Accepted: 
26 February 2013
|
Published: 
15 April 2013
| Citation
Abstract: 

Growth of lead sulphide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath containing Pb(CH3COO)2 and Na2S2O3. X-ray diffraction pattern showed that the deposited films possess cubic structure with most prominent reflection along (200) plane. The dependency of microstructural parameters such  as crystallite size, strain and dislocation density with film thickness has been analyzed. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films possess a direct band gap value of 0.37 eV.

Keywords: 

metal chalcogenides, IV-VI semiconductors, surface morphology, PbS, band gap

1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
  References

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