OPEN ACCESS
The etching process of Porous Silicon has been carried out using an electrochemical oxidation technique. Oxidized samples were immobilized with -Leucine, DL-Iso Leucine and DL-Nor Leucine solutions. Surface morphology and optical properties of the samples have been analyzed using scanning electron microscopy and optical absorption analysis techniques respectively. The bonding characteristics on the surface before and after amino acid deposition have been studied using fourier transform infrared spectroscopy. Photoluminescence spectroscopy was employed to determine the enhancement in wavelength shift of the etched porous silicon.
porous silicon, L-leucine, DL-iso-leucine, DL-nor-leucine
[1] U.Gosele, V.Lehmann, Appl. Phys. Lett., 58, 856 (1991).
[2] Prajakta S.Chaudhari, Anisha Gokarna, Manjusha Kulkarni, M.S.Karve, B.V. Bhoraskar, Sensors and Actuators B, 107, 258 (2005).
[3] Valentyna M. Starodub, Leonid L.Fedorenko, Andriy P. Sisetskiy, Nickolaj F. Starodub, Sensors and Actuators B, 409 (1999).
[4] J. Lopez-Garcia, .R.J. Martin-Palma, M. Manso, J.M. Martinez-Duart, Sensors and Actuators B, 126, 82 (2007).
[5] H.M. Han, H.F. Li., S-J. Xiao, Thin Solid Films, 519, 3325 (2011).
[6] B. Lawrence, N. Alagumanikumaran, N. Prithivikumaran, N. Jeyakumaran, V. Ramadas, B. Natarajan, Appl. Sur. Sci., 264, 767 (2013).
[7] S. Singh, S.N. Sharma, Govind, S.M. Shivaprasad, M. Lal, M.A. Khan, J. Mater. Sci: Mater. in Medicine, 20, S181 (2009).
[8] S. Tembe, P.S. Chaudhari, S.V. Bhoraskar, D’Souza.S.F., M.S. Karve, IEEE Sensors, J. 8, 1593 (2008).
[9] L.D. Stefano, P. Arcari, A. Lamberti, C. Sanges, L. Rotiroti, I. Rea, I. Rendina, Sensors, 7, 214 (2007).
[10]Hongyan Zhang., Biosensors and Bioelectronics, 44, 89 (2013).
[11]Melikjanan, G.A., Martirosyan, Kh.S., J. Contemporary Phys-ics, 47, 193 (2012).
[12]Jarnosaloonen., J. Pharmaceutical Sciences, 97, 632 (2008).
[13]Be. Benyahia, N. Gabouze, M. Haddadi, L. Guerbous, K. Beldjilali, Thin Solid Films, 516, 8707 (2008).
[14]Saakshi Dhanekar, Swati Jain, Biosensors and Bioelectronics, 41, 54 (2013).
[15]D.A. Kim, J.S. Lee, M.B. Pak, N.H. Cho, J. the Korean Physi-cal Society, 42, S184 (2003).
[16]O. Bisi, Stefano Ossicini, L. Pavesi, Surface Science Reports, 38, 1 (2000).
[17]L.T. Canham, Appl. Phys. Lett., 57, 1046 (1990).
[18]L.T. Canham, Advan. Mater., 7, 1033 (1995).