Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor

Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor

Hsiang Chen* Yun Yang He Min Han Lin Shang Ren Lin Sheng-Hao Hung Kun Min Hsieh Shin-Jie Tsai Yu-Cheng Chu

Department of Applied Material and Optoelectronic Engineering, National Chi Nan University, 54561, Puli, Taiwan, R.O.C.

Corresponding Author Email: 
hchen@ncnu.edu.tw
Page: 
11-13
|
DOI: 
https://doi.org/10.14447/jnmes.v19i1.341
Received: 
17 August 2015
|
Accepted: 
06 November 2015
|
Published: 
10 February 2016
| Citation

OPEN ACCESS

Abstract: 

Resolving failure origins of AlGaN/GaN light emitting diodes (LED) has received intensive study recently. In this study, formation of GaCO3 caused by carbon contamination may result in deformation of the electrode near the surface and degrade the device. The electrochemical reactions may cause device damages. Degradation in electrical properties is observed in I-V characteristics. Forward-bias and reverse-bias EL images are used to trace the damaged areas. Furthermore, focus ion beam (FIB), scanning electron microscope (SEM), energy dispersive X-ray diffraction (EDX) are applied to examine the damaged areas. Results indicate that formation of GaCO3 may deform the electrode, generate the reverse-bias EL and cause the degradation.

Keywords: 

light emitting diodes, electrochemical reaction, carbon contamination, energy dispersive X-ray diffraction

1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusion
  References

[1] Meneghini, M., Zehnder, U., Hahn, B., Meneghesso, G., and Zanoni, E., IEEE Electron Device Lett., 30, 1051 (2009).

[2] Chen, H., Appl. Phys. Lett., 102, 162106 (2013).

[3] Chen, H., Huang, B.Y., and Chu, Y.C., Appl. Phys. Lett., 103, 173502 (2013).

[4] Chen, H., Chang, H.W., Shei, S.C., Hung. S.H. and Sheu, M.L., Electron. Lett., 50, 2, 108 (2014).

[5] Chen, H., Shen, H.Y., Shei S.C., Kang N.C., Lai H. C., Chu Y.C., and Chang, H.W., Int. J. Nanotechnol., 12, 38 (2015).