Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water Vapor

Degradation of InGaN/GaN LEDs under Forward-bias Operations in Salty Water Vapor

Hsiang Chen* Kun Min Hsieh Yun Yang He Li Chen Chu Ming Ling Lee Kow Ming Chang

Department of Applied Material and Optoelectronic Engineering, National Chi Nan University, 54561, Puli, Taiwan, R.O.C

Department of Electronic Engineering, National Chiao Tung University, Hsin-Chu, 30010, Taiwan, R.O.C

Corresponding Author Email: 
hchen@ncnu.edu.tw
Page: 
7-10
|
DOI: 
https://doi.org/10.14447/jnmes.v19i1.340
Received: 
27 July 2015
|
Accepted: 
06 November 2015
|
Published: 
10 February 2015
| Citation

OPEN ACCESS

Abstract: 

Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.

Keywords: 

green InGaN/GaN LED, salty water vapor, forward-bias,corrosion, Au diffussion

1. Introduction
2. Experimental Methods
3. Results and Discussion
4. Conclusion
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