Electrolyte-Insulator-Semiconductor (EIS) with Gd2O3-based Sensing Membrane for pH-Sensing Applications
OPEN ACCESS
Gd2O3 as pH sensing membrane on Si substrate treated with annealing for the electrolyte-insulator-semiconductor has been fabricated. The high-k sensing membrane can obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate. The high-k Gd2O3 pH sensing membrane show promise for future industrial sensing device applications.
Gd2O3, annealing, electrolyte-insulator-semiconductor, sensing membrane, pH value
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