The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 ºC could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.
EGFET, Annealing, Samarium oxide, Hysteresis effects, pH. sensor
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