Deposition of High-k Samarium Oxide Membrane on Polysilicon for the Extented-Gate Field-Effect Transistor (EGFET) Applications

Deposition of High-k Samarium Oxide Membrane on Polysilicon for the Extented-Gate Field-Effect Transistor (EGFET) Applications

Chyuan-Haur Kao Hsiang Chen* Jer-Chyi Wang Yu-Cheng Chu Chiao-Sung Lai Shih-Po Lin Chuan-Yu Huang Jiun-Cheng Ou

Department of Electronic Engineering, Chang Gung University

Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No.1, University Rd, Puli, Nantou County, 54561 Taiwan, R.O.C.

Corresponding Author Email: 
hchen@ncnu.edu.tw
Page: 
013-016
|
DOI: 
https://doi.org/10.14447/jnmes.v17i1.437
Received: 
September 25, 2013
|
Accepted: 
January 08, 2014
|
Published: 
January 22, 2014
| Citation
Abstract: 

The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 ºC could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.

Keywords: 

EGFET, Annealing, Samarium oxide, Hysteresis effects, pH. sensor

1. Introduction
2. Experimental Methods
3. Results and Discussion
4. Conclusion
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