Application to Top-Metal Ageing Effects on Chip Electro-Thermal Distributions During Short Circuit Operations

Dynamic IGBT Model

Application to Top-Metal Ageing Effects on Chip Electro-Thermal Distributions During Short Circuit Operations

Jeff Moussodji Thierry Kociniewski Zoubir Khatir 

Laboratory of News Technologies, IFSTTAR 25, allée des marronniers 78000 Versailles, France

Groupe d’Etude de la Matière Condensée (CNRS and UVSQ) 45 avenue des États-Unis, 78035 Versailles cedex, France

Page: 
363-375
|
DOI: 
https://doi.org/10.3166/EJEE.17.363-375
Received: 
2 March 2015
| |
Accepted: 
20 October 2015
| | Citation

OPEN ACCESS

Abstract: 

An innovative model of IGBT has been carried-out to monitor temperature distributions and current sharing with in an IGBT chip during critical operations. The aim of this paper is to highlight the electro-thermal stress and their effects on the semiconductor IGBT chip and its immediate vicinity, by evaluating the effects of damage using distributed models. One of the failure mechanisms in IGBT (Latch-up) is due to the “switch on” of the NPNP parasitic thyristor. This IGBT damage mechanism leads in many cases to the destruction of the component. In this paper dynamic latch-up failures during IGBT short- circuit operations has been performed

Keywords: 

electro thermal modeling, IGBT, short-circuit, reliability, ageing, dynamic latch- up

1. Introduction
2. Modelling Strategy
3. Inclusion of the Latch-Up
4. Application to Metallization Ageing Impacts
5. Dynamic Latch-Up Failure During Short-Circuit Operation
6. Conclusion
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